PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	2.6 A, 3.8 A
	Maximum Drain Source Voltage	20 V
	Series	PowerTrench
	Package Type	MicroFET Thin
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	160 mΩ, 530 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	1.4 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	3 nC @ 4.5 V, 5.5 nC @ 4.5 V
	Length	1.6mm
	Width	1.6mm
	Number of Elements per Chip	2
	Height	0.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 2.6 A, 3.8 A
	Maximum Drain Source Voltage 20 V
	Series PowerTrench
	Package Type MicroFET Thin
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 160 mΩ, 530 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 1.4 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 3 nC @ 4.5 V, 5.5 nC @ 4.5 V
	Length 1.6mm
	Width 1.6mm
	Number of Elements per Chip 2
	Height 0.5mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench Dual N/P-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

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