onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 4.4 A, 6.2 A, 40 V, 8-Pin SOIC FDS4897C
- RS Stock No.:
- 671-0539
- Mfr. Part No.:
- FDS4897C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.25
(exc. VAT)
£5.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 95 unit(s) ready to ship
- Plus 100 left, ready to ship from another location
- Plus 200 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.85 | £4.25 |
| 50 - 95 | £0.732 | £3.66 |
| 100 - 495 | £0.636 | £3.18 |
| 500 - 995 | £0.558 | £2.79 |
| 1000 + | £0.508 | £2.54 |
*price indicative
- RS Stock No.:
- 671-0539
- Mfr. Part No.:
- FDS4897C
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.4 A, 6.2 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 29 mΩ, 46 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V, 20 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.4 A, 6.2 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ, 46 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V, 20 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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