PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	6 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	32 mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	2
	Width	4mm
	Length	5mm
	Typical Gate Charge @ Vgs	14.5 nC @ 5 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 6 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 32 mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 2
	Width 4mm
	Length 5mm
	Typical Gate Charge @ Vgs 14.5 nC @ 5 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 1.5mm

onsemi PowerTrench Dual P-Channel MOSFET, 6 A, 30 V, 8-Pin SOIC FDS6975

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

Related links

Be the first to know about our latest products and services