onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

£1,000.00

(exc. VAT)

£1,200.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.40£1,000.00

*price indicative

RS Stock No.:
166-3248
Mfr. Part No.:
FDS6975
Brand:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

14.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-0.73V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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