onsemi PowerTrench Dual N/P-Channel MOSFET, 4.5 A, 6.4 A, 30 V, 8-Pin SOIC FDS8958B
- RS Stock No.:
- 166-3211
- Mfr. Part No.:
- FDS8958B
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£557.50
(exc. VAT)
£670.00
(inc. VAT)
FREE delivery for orders over £50.00
- Final 10,000 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.223 | £557.50 |
*price indicative
- RS Stock No.:
- 166-3211
- Mfr. Part No.:
- FDS8958B
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 4.5 A, 6.4 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 39 mΩ, 80 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.6 W, 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -25 V, -20 V, +20 V, +25 V | |
Typical Gate Charge @ Vgs | 14 nC @ 10 V, 8.3 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 2 | |
Width | 3.9mm | |
Length | 4.9mm | |
Height | 1.575mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.5 A, 6.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 39 mΩ, 80 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W, 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -25 V, -20 V, +20 V, +25 V | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V, 8.3 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Width 3.9mm | ||
Length 4.9mm | ||
Height 1.575mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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