onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 4.5 A, 6.4 A, 30 V, 8-Pin SOIC FDS8958B
- RS Stock No.:
- 806-3674
- Mfr. Part No.:
- FDS8958B
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£4.31
(exc. VAT)
£5.17
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 11,720 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.431 | £4.31 |
| 100 - 490 | £0.311 | £3.11 |
| 500 - 990 | £0.261 | £2.61 |
| 1000 - 2490 | £0.222 | £2.22 |
| 2500 + | £0.207 | £2.07 |
*price indicative
- RS Stock No.:
- 806-3674
- Mfr. Part No.:
- FDS8958B
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.5 A, 6.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 39 mΩ, 80 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W, 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -25 V, -20 V, +20 V, +25 V | |
| Transistor Material | Si | |
| Length | 4.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V, 8.3 nC @ 10 V | |
| Width | 3.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.575mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.5 A, 6.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 39 mΩ, 80 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W, 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -25 V, -20 V, +20 V, +25 V | ||
Transistor Material Si | ||
Length 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V, 8.3 nC @ 10 V | ||
Width 3.9mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.575mm | ||
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