onsemi PowerTrench Dual N/P-Channel MOSFET, 5 A, 6.5 A, 20 V, 8-Pin SOIC FDS9934C
- RS Stock No.:
- 806-3680
- Mfr. Part No.:
- FDS9934C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 10 units)*
£5.51
(exc. VAT)
£6.61
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 80 unit(s) ready to ship
- Plus 10 left, ready to ship from another location
- Plus 2,190 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £0.551 | £5.51 |
| 100 - 490 | £0.386 | £3.86 |
| 500 - 990 | £0.335 | £3.35 |
| 1000 - 2490 | £0.284 | £2.84 |
| 2500 + | £0.267 | £2.67 |
*price indicative
- RS Stock No.:
- 806-3680
- Mfr. Part No.:
- FDS9934C
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 5 A, 6.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ, 90 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.6 W, 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, -10 V, +10 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V, 8.7 nC @ 4.5 V | |
| Length | 4.9mm | |
| Width | 3.9mm | |
| Number of Elements per Chip | 2 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.575mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 5 A, 6.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ, 90 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.6 W, 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, -10 V, +10 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V, 8.7 nC @ 4.5 V | ||
Length 4.9mm | ||
Width 3.9mm | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.575mm | ||
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