onsemi PowerTrench Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC FDS9926A
- RS Stock No.:
- 166-2631
- Mfr. Part No.:
- FDS9926A
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£547.50
(exc. VAT)
£657.50
(inc. VAT)
FREE delivery for orders over £50.00
- 2,500 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.219 | £547.50 |
*price indicative
- RS Stock No.:
- 166-2631
- Mfr. Part No.:
- FDS9926A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.5 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 30 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.6V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Width | 4mm | |
Number of Elements per Chip | 2 | |
Length | 5mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Length 5mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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