onsemi PowerTrench Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC FDS9926A

View all MOSFETs

Subtotal (1 reel of 2500 units)*

£547.50

(exc. VAT)

£657.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +£0.219£547.50

*price indicative

RS Stock No.:
166-2631
Mfr. Part No.:
FDS9926A
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

2

Width

4mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links