onsemi PowerTrench Dual P-Channel MOSFET, 2.3 A, 60 V, 8-Pin SOIC NDS9948

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Subtotal (1 reel of 2500 units)*

£427.50

(exc. VAT)

£512.50

(inc. VAT)

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2500 +£0.171£427.50

*price indicative

RS Stock No.:
166-2654
Mfr. Part No.:
NDS9948
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

9 nC @ 10 V

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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