onsemi PowerTrench Dual N/P-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT
- RS Stock No.:
- 759-9147
- Mfr. Part No.:
- FDME1034CZT
- Brand:
- onsemi
Subtotal (1 tape of 5 units)*
£3.70
(exc. VAT)
£4.45
(inc. VAT)
FREE delivery for orders over £50.00
- 3,825 left, ready to ship
Units | Per unit | Per Tape* |
---|---|---|
5 - 45 | £0.74 | £3.70 |
50 - 95 | £0.638 | £3.19 |
100 - 495 | £0.554 | £2.77 |
500 - 995 | £0.486 | £2.43 |
1000 + | £0.442 | £2.21 |
*price indicative
- RS Stock No.:
- 759-9147
- Mfr. Part No.:
- FDME1034CZT
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 2.6 A, 3.8 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | MicroFET Thin | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 160 mΩ, 530 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.4 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Length | 1.6mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 3 nC @ 4.5 V, 5.5 nC @ 4.5 V | |
Width | 1.6mm | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Height | 0.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.6 A, 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET Thin | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 160 mΩ, 530 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 1.6mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V, 5.5 nC @ 4.5 V | ||
Width 1.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Height 0.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Dual N/P-Channel MOSFET 3.8 A 6-Pin MicroFET Thin FDME1034CZT
- onsemi PowerTrench Dual P-Channel MOSFET 20 V, 6-Pin MicroFET Thin FDME1023PZT
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin MicroFET Thin FDME1024NZT
- onsemi PowerTrench Dual N/P-Channel MOSFET 3.7 A 6-Pin MicroFET 2 x 2 FDMA1032CZ
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin MicroFET 2 x 2 FDMA1024NZ
- onsemi PowerTrench Dual P-Channel MOSFET 20 V, 6-Pin MicroFET 2 x 2 FDMA1023PZ
- onsemi PowerTrench Dual P-Channel MOSFET 30 V, 6-Pin MicroFET 2 x 2 FDMA3023PZ
- onsemi PowerTrench Dual N/P-Channel MOSFET 3 A 6-Pin SSOT-6 FDC6420C