onsemi PowerTrench Dual N/P-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT
- RS Stock No.:
- 759-9147
- Mfr. Part No.:
- FDME1034CZT
- Brand:
- onsemi
Subtotal (1 tape of 5 units)*
£3.70
(exc. VAT)
£4.45
(inc. VAT)
FREE delivery for orders over £50.00
- 3,845 left, ready to ship
Units | Per unit | Per Tape* |
---|---|---|
5 - 45 | £0.74 | £3.70 |
50 - 95 | £0.638 | £3.19 |
100 - 495 | £0.554 | £2.77 |
500 - 995 | £0.486 | £2.43 |
1000 + | £0.442 | £2.21 |
*price indicative
- RS Stock No.:
- 759-9147
- Mfr. Part No.:
- FDME1034CZT
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 2.6 A, 3.8 A | |
Maximum Drain Source Voltage | 20 V | |
Series | PowerTrench | |
Package Type | MicroFET Thin | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 160 mΩ, 530 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.4 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Typical Gate Charge @ Vgs | 3 nC @ 4.5 V, 5.5 nC @ 4.5 V | |
Width | 1.6mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Length | 1.6mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 0.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.6 A, 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type MicroFET Thin | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 160 mΩ, 530 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V, 5.5 nC @ 4.5 V | ||
Width 1.6mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Length 1.6mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 0.5mm | ||
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