onsemi PowerTrench Dual N-Channel MOSFET, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1024NZT
- RS Stock No.:
- 166-2713
- Mfr. Part No.:
- FDME1024NZT
- Brand:
- onsemi
Subtotal (1 reel of 5000 units)*
£1,060.00
(exc. VAT)
£1,270.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 13 February 2026
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.212 | £1,060.00 |
*price indicative
- RS Stock No.:
- 166-2713
- Mfr. Part No.:
- FDME1024NZT
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.8 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | MicroFET Thin | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 160 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.4 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Width | 1.6mm | |
Number of Elements per Chip | 2 | |
Length | 1.6mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 3 nC @ 4.5 V | |
Height | 0.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET Thin | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.6mm | ||
Number of Elements per Chip 2 | ||
Length 1.6mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V | ||
Height 0.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin MicroFET Thin FDME1024NZT
- onsemi PowerTrench Dual N/P-Channel MOSFET 3.8 A 6-Pin MicroFET Thin FDME1034CZT
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin MicroFET 2 x 2 FDMA1024NZ
- onsemi PowerTrench Dual N/P-Channel MOSFET 3.7 A 6-Pin MicroFET 2 x 2 FDMA1032CZ
- onsemi PowerTrench Dual P-Channel MOSFET 20 V, 6-Pin MicroFET Thin FDME1023PZT
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin SOT-23 FDC6305N
- onsemi PowerTrench Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 FDG8850NZ
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin SOT-363 FDG1024NZ