onsemi PowerTrench Dual N-Channel MOSFET, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1024NZT
- RS Stock No.:
- 166-2713
- Mfr. Part No.:
- FDME1024NZT
- Brand:
- onsemi
Subtotal (1 reel of 5000 units)*
£1,060.00
(exc. VAT)
£1,270.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 14 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.212 | £1,060.00 |
*price indicative
- RS Stock No.:
- 166-2713
- Mfr. Part No.:
- FDME1024NZT
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MicroFET Thin | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 3 nC @ 4.5 V | |
| Length | 1.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.6mm | |
| Number of Elements per Chip | 2 | |
| Height | 0.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET Thin | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V | ||
Length 1.6mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.6mm | ||
Number of Elements per Chip 2 | ||
Height 0.5mm | ||
Minimum Operating Temperature -55 °C | ||
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