onsemi PowerTrench Dual N-Channel MOSFET, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1024NZT

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Subtotal (1 reel of 5000 units)*

£1,060.00

(exc. VAT)

£1,270.00

(inc. VAT)

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  • 5,000 unit(s) shipping from 04 March 2026
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Per Reel*
5000 +£0.212£1,060.00

*price indicative

RS Stock No.:
166-2713
Mfr. Part No.:
FDME1024NZT
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

MicroFET Thin

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Transistor Material

Si

Width

1.6mm

Length

1.6mm

Minimum Operating Temperature

-55 °C

Height

0.5mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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