onsemi Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C
- RS Stock No.:
- 761-9847
- Mfr. Part No.:
- FDG6332C
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 761-9847
- Mfr. Part No.:
- FDG6332C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 600 mA, 700 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 442 mΩ, 700 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 2mm | |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 1.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 600 mA, 700 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 442 mΩ, 700 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.25mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
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MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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