onsemi Isolated 2 Type N, Type N, Type P, Type P-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SOT-363 FDG6332C
- RS Stock No.:
- 761-9847
- Mfr. Part No.:
- FDG6332C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£3.25
(exc. VAT)
£3.90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.325 | £3.25 |
| 100 - 240 | £0.281 | £2.81 |
| 250 - 490 | £0.243 | £2.43 |
| 500 - 990 | £0.214 | £2.14 |
| 1000 + | £0.195 | £1.95 |
*price indicative
- RS Stock No.:
- 761-9847
- Mfr. Part No.:
- FDG6332C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N, Type N, Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.77V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 0.3W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 1.25mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N, Type N, Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.77V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 0.3W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 1.25mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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