Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

RS Stock No.:: 163-1118
Mfr. Part No.:: NTJD4158CT1G
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Available to back order for despatch 03/12/2024

Price Each (On a Reel of 3000)

£0.085

(exc. VAT)

£0.102

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.085	£255.00

*price indicative

RS Stock No.:: 163-1118
Mfr. Part No.:: NTJD4158CT1G
Brand:: onsemi

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	250 mA, 880 mA
Maximum Drain Source Voltage	20 V, 30 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.5 Ω, 500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	270 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
Maximum Operating Temperature	+150 °C
Length	2.2mm
Number of Elements per Chip	2
Width	1.35mm
Typical Gate Charge @ Vgs	0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1mm