onsemi Dual N/P-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 NTJD4158CT1G
- RS Stock No.:
- 163-1118
- Mfr. Part No.:
- NTJD4158CT1G
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£228.00
(exc. VAT)
£273.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.076 | £228.00 |
*price indicative
- RS Stock No.:
- 163-1118
- Mfr. Part No.:
- NTJD4158CT1G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 250 mA, 880 mA | |
| Maximum Drain Source Voltage | 20 V, 30 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2.5 Ω, 500 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 270 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, -12 V, +12 V, +20 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 0.9 nC @ 5 V, 2.2 nC @ 4.5 V | |
| Length | 2.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 250 mA, 880 mA | ||
Maximum Drain Source Voltage 20 V, 30 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2.5 Ω, 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 270 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, -12 V, +12 V, +20 V | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 0.9 nC @ 5 V, 2.2 nC @ 4.5 V | ||
Length 2.2mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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