Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CG
- RS Stock No.:
- 163-1118
- Mfr. Part No.:
- NTJD4158CT1G
- Brand:
- onsemi
Available to back order for despatch 29/04/2025
Added
Price Each (On a Reel of 3000)
£0.097
(exc. VAT)
£0.116
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 + | £0.097 | £291.00 |
| *price indicative | ||
- RS Stock No.:
- 163-1118
- Mfr. Part No.:
- NTJD4158CT1G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 250 mA, 880 mA |
| Maximum Drain Source Voltage | 20 V, 30 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 2.5 Ω, 500 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 270 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, -12 V, +12 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 1.35mm |
| Typical Gate Charge @ Vgs | 0.9 nC @ 5 V, 2.2 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 2.2mm |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
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