Vishay Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 SI1922EDH-T1-GE3

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Subtotal (1 pack of 50 units)*

£12.40

(exc. VAT)

£14.90

(inc. VAT)

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50 +£0.248£12.40

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Packaging Options:
RS Stock No.:
812-3091
Mfr. Part No.:
SI1922EDH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

263 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

1.6 nC @ 8 V

Number of Elements per Chip

2

Width

1.35mm

Transistor Material

Si

Length

2.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Dual N-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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