Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3
- RS Stock No.:
- 814-1225
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Brand:
- Vishay
Available to back order for despatch 01/08/2025
Price Each (In a Pack of 20)
£0.439
(exc. VAT)
£0.527
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 180 | £0.439 | £8.78 |
| 200 - 480 | £0.387 | £7.74 |
| 500 - 980 | £0.325 | £6.50 |
| 1000 - 1980 | £0.308 | £6.16 |
| 2000 + | £0.263 | £5.26 |
| *price indicative | ||
- RS Stock No.:
- 814-1225
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.3 A, 4.5 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 65 mΩ, 170 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 6.5 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Width | 2.15mm |
| Typical Gate Charge @ Vgs | 13.1 nC @ 8 V, 9.7 nC @ 8 V |
| Length | 2.15mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 0.8mm |
- RS Stock No.:
- 814-1225
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Brand:
- Vishay