Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3

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Subtotal (1 reel of 3000 units)*

£684.00

(exc. VAT)

£822.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.228£684.00

*price indicative

RS Stock No.:
165-7183
Mfr. Part No.:
SIA517DJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Width

2.15mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

0.8mm

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor



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