Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£462.00

(exc. VAT)

£555.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.154£462.00

*price indicative

RS Stock No.:
145-2681
Mfr. Part No.:
SI1967DH-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.1A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

790mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

2.6nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Width

1.35 mm

Height

1mm

Length

2.2mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links