Vishay Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3

RS Stock No.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Brand:: Vishay

Vishay Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3

Bulk discount available

Subtotal (1 pack of 20 units)**

£6.26

(exc. VAT)

£7.52

(inc. VAT)

1580 In stock - FREE next working day delivery available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over £50.00

Check stock levels

Units	Per unit	Per Pack**
20 - 180	£0.313	£6.26
200 - 480	£0.294	£5.88
500 - 980	£0.267	£5.34
1000 - 1980	£0.251	£5.02
2000 +	£0.235	£4.70

**price indicative

RS Stock No.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Brand:: Vishay

Si1029X, Complementary N- and P-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	190 mA, 300 mA
Maximum Drain Source Voltage	60 V
Package Type	SC-89-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	3 Ω, 8 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	250 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	2
Width	1.7mm
Typical Gate Charge @ Vgs	1700 nC @ 15 V, 750 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Length	1.7mm
Minimum Operating Temperature	-55 °C
Height	0.6mm

Vishay Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3

FREE delivery for orders over £50.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

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