Vishay Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3

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Subtotal (1 pack of 20 units)*

£7.44

(exc. VAT)

£8.92

(inc. VAT)

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Per Pack*
20 - 180£0.372£7.44
200 - 480£0.35£7.00
500 - 980£0.317£6.34
1000 - 1980£0.298£5.96
2000 +£0.279£5.58

*price indicative

Packaging Options:
RS Stock No.:
787-9055
Mfr. Part No.:
SI1029X-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

190 mA, 300 mA

Maximum Drain Source Voltage

60 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3 Ω, 8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

1.7mm

Number of Elements per Chip

2

Width

1.7mm

Typical Gate Charge @ Vgs

1700 nC @ 15 V, 750 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.6mm

Dual N/P-Channel MOSFET, Vishay Semiconductor



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