Vishay Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3
- RS Stock No.:
- 812-3029
- Mfr. Part No.:
- SI1025X-T1-GE3
- Brand:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 812-3029
- Mfr. Part No.:
- SI1025X-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 135 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SC-89-6 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 8 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 250 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.2mm | |
Length | 1.7mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 1.7 nC @ 15 V | |
Height | 0.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 135 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SC-89-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 8 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 250 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.2mm | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 1.7 nC @ 15 V | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
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