Vishay Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3
- RS Stock No.:
- 812-3029
- Mfr. Part No.:
- SI1025X-T1-GE3
- Brand:
- Vishay
Discontinued
- RS Stock No.:
- 812-3029
- Mfr. Part No.:
- SI1025X-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 135 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SC-89-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 8 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 250 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 1.2mm | |
| Length | 1.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.7 nC @ 15 V | |
| Number of Elements per Chip | 2 | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 135 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SC-89-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 8 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 250 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 1.2mm | ||
Length 1.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.7 nC @ 15 V | ||
Number of Elements per Chip 2 | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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