Vishay Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£1,282.50

(exc. VAT)

£1,540.00

(inc. VAT)

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Being discontinued
  • Final 2,500 unit(s), ready to ship
Units
Per unit
Per Reel*
2500 +£0.513£1,282.50

*price indicative

RS Stock No.:
919-0297
Mfr. Part No.:
SI4559ADY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3.9 A, 5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ, 150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W, 3.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

13 nC @ 30 V, 14.5 nC @ 30 V

Maximum Operating Temperature

+150 °C

Length

5mm

Transistor Material

Si

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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