Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

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Subtotal (1 pack of 20 units)*

£10.14

(exc. VAT)

£12.16

(inc. VAT)

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Per Pack*
20 - 180£0.507£10.14
200 - 480£0.431£8.62
500 - 980£0.406£8.12
1000 - 1980£0.381£7.62
2000 +£0.355£7.10

*price indicative

Packaging Options:
RS Stock No.:
787-9020
Mfr. Part No.:
SI4532CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Transistor Material

Si

Width

4mm

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.5mm

Dual N/P-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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