Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC

Subtotal (1 reel of 2500 units)*

£507.50

(exc. VAT)

£610.00

(inc. VAT)

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  • 2,500 unit(s) ready to ship
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Units
Per unit
Per Reel*
2500 +£0.203£507.50

*price indicative

RS Stock No.:
165-7226
Mfr. Part No.:
SI4532CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.78W

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


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