onsemi Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW

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Subtotal (1 pack of 50 units)*

£9.85

(exc. VAT)

£11.80

(inc. VAT)

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  • 100 unit(s) ready to ship
  • Plus 70,350 unit(s) shipping from 30 October 2025
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50 - 450£0.197£9.85
500 - 950£0.17£8.50
1000 +£0.147£7.35

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Packaging Options:
RS Stock No.:
761-3571
Mfr. Part No.:
2N7002DW
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.25mm

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2mm

Height

1mm

Minimum Operating Temperature

-55 °C

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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