onsemi Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW
- RS Stock No.:
- 761-3571
- Mfr. Part No.:
- 2N7002DW
- Brand:
- onsemi
Save 25% when you buy 1000 units
Subtotal (1 pack of 50 units)*
£9.85
(exc. VAT)
£11.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
- Plus 70,350 unit(s) shipping from 08 October 2025
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Units | Per unit | Per Pack* |
---|---|---|
50 - 450 | £0.197 | £9.85 |
500 - 950 | £0.17 | £8.50 |
1000 + | £0.147 | £7.35 |
*price indicative
- RS Stock No.:
- 761-3571
- Mfr. Part No.:
- 2N7002DW
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 115 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-363 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 13.5 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 200 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.25mm | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 2mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 115 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 13.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 200 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.25mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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