onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
- RS Stock No.:
- 178-7608
- Mfr. Part No.:
- NDC7001C
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£387.00
(exc. VAT)
£465.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 25 December 2025
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.129 | £387.00 |
*price indicative
- RS Stock No.:
- 178-7608
- Mfr. Part No.:
- NDC7001C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 340 mA, 510 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 4 Ω, 10 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 960 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.7mm | |
Typical Gate Charge @ Vgs | 1.1 nC @ 10 V, 1.6 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Length | 3mm | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 340 mA, 510 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 4 Ω, 10 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 1.1 nC @ 10 V, 1.6 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Length 3mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Features and benefits:
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities
NDC7001C MOSFETs are ideal for;
• Low current
• Switching
• Power supplies
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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