onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C

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Subtotal (1 reel of 3000 units)*

£387.00

(exc. VAT)

£465.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.129£387.00

*price indicative

RS Stock No.:
178-7608
Mfr. Part No.:
NDC7001C
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

340 mA, 510 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω, 10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.1 nC @ 10 V, 1.6 nC @ 10 V

Number of Elements per Chip

2

Length

3mm

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1mm

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.

Features and benefits:


• DMOS Technology
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities

NDC7001C MOSFETs are ideal for;


• Low voltage
• Low current
• Switching
• Power supplies


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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