onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N
- RS Stock No.:
- 739-0161
- Mfr. Part No.:
- NDC7002N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£1.67
(exc. VAT)
£2.005
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 7,595 unit(s) shipping from 09 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.334 | £1.67 |
| 50 - 95 | £0.288 | £1.44 |
| 100 - 495 | £0.25 | £1.25 |
| 500 - 995 | £0.22 | £1.10 |
| 1000 + | £0.20 | £1.00 |
*price indicative
- RS Stock No.:
- 739-0161
- Mfr. Part No.:
- NDC7002N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 960mW | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 960mW | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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