onsemi Dual N-Channel MOSFET, 680 mA, 25 V, 6-Pin SOT-23 FDC6303N
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Brand:
- onsemi
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- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 680 mA | |
Maximum Drain Source Voltage | 25 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 450 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.65V | |
Maximum Power Dissipation | 900 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | +8 V | |
Typical Gate Charge @ Vgs | 1.64 nC @ 4.5 V | |
Width | 1.7mm | |
Number of Elements per Chip | 2 | |
Length | 3mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 680 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage +8 V | ||
Typical Gate Charge @ Vgs 1.64 nC @ 4.5 V | ||
Width 1.7mm | ||
Number of Elements per Chip 2 | ||
Length 3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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