onsemi UniFET Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23

Subtotal (1 reel of 3000 units)*

£156.00

(exc. VAT)

£186.00

(inc. VAT)

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  • Plus 3,000 unit(s) shipping from 29 December 2025
  • Plus 15,000 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Reel*
3000 +£0.052£156.00

*price indicative

RS Stock No.:
145-5305
Mfr. Part No.:
FDV303N
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

680mA

Maximum Drain Source Voltage Vds

25V

Package Type

SOT-23

Series

UniFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.64nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.6V

Maximum Power Dissipation Pd

350mW

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Length

2.92mm

Standards/Approvals

No

Width

1.3 mm

Height

0.93mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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