onsemi UniFET N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-3PN FDA24N40F

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Subtotal (1 pack of 5 units)*

£14.01

(exc. VAT)

£16.81

(inc. VAT)

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5 +£2.802£14.01

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Packaging Options:
RS Stock No.:
903-4134
Mfr. Part No.:
FDA24N40F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

400 V

Package Type

TO-3PN

Series

UniFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

235 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.2mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Height

20.1mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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