onsemi P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 FDV304P

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Subtotal (1 reel of 3000 units)*

£207.00

(exc. VAT)

£249.00

(inc. VAT)

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3000 - 3000£0.069£207.00
6000 +£0.065£195.00

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RS Stock No.:
166-1711
Mfr. Part No.:
FDV304P
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

460 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Width

1.3mm

Number of Elements per Chip

1

Length

2.92mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.93mm

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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