onsemi Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 FDG6303N
- RS Stock No.:
- 739-0189
- Mfr. Part No.:
- FDG6303N
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£1.90
(exc. VAT)
£2.30
(inc. VAT)
FREE delivery for orders over £50.00
- Final 65 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.38 | £1.90 |
50 - 95 | £0.326 | £1.63 |
100 - 495 | £0.284 | £1.42 |
500 - 995 | £0.25 | £1.25 |
1000 + | £0.226 | £1.13 |
*price indicative
- RS Stock No.:
- 739-0189
- Mfr. Part No.:
- FDG6303N
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 500 mA | |
Maximum Drain Source Voltage | 25 V | |
Package Type | SOT-363 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 770 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.65V | |
Maximum Power Dissipation | 300 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | +8 V | |
Maximum Operating Temperature | +150 °C | |
Width | 1.25mm | |
Typical Gate Charge @ Vgs | 1.64 nC @ 5 V | |
Length | 2mm | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 770 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage +8 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.25mm | ||
Typical Gate Charge @ Vgs 1.64 nC @ 5 V | ||
Length 2mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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