onsemi Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 FDG6303N

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
178-7601
Mfr. Part No.:
FDG6303N
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

770 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

+8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

2mm

Transistor Material

Si

Typical Gate Charge @ Vgs

1.64 nC @ 5 V

Width

1.25mm

Minimum Operating Temperature

-55 °C

Height

1mm

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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