onsemi Dual N/P-Channel MOSFET, 460 mA, 680 mA, 25 V, 6-Pin SOT-23 FDC6321C
- RS Stock No.:
- 166-2481
- Mfr. Part No.:
- FDC6321C
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£483.00
(exc. VAT)
£579.00
(inc. VAT)
FREE delivery for orders over £50.00
- 3,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.161 | £483.00 |
*price indicative
- RS Stock No.:
- 166-2481
- Mfr. Part No.:
- FDC6321C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 460 mA, 680 mA | |
Maximum Drain Source Voltage | 25 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 1.1 Ω, 450 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.65V | |
Maximum Power Dissipation | 900 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V | |
Length | 3mm | |
Width | 1.7mm | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 460 mA, 680 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.1 Ω, 450 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V | ||
Length 3mm | ||
Width 1.7mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Digital FETs, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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