Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 30 V, 3-Pin TO-220 IPP055N03LGXKSA1

RS Stock No.:: 130-0923
Mfr. Part No.:: IPP055N03LGXKSA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 30 V, 3-Pin TO-220 IPP055N03LGXKSA1

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Subtotal (1 pack of 10 units)*

£8.08

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£9.70

(inc. VAT)

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Final 50 unit(s), ready to ship

Units	Per unit	Per Pack*
10 - 40	£0.808	£8.08
50 - 90	£0.768	£7.68
100 - 240	£0.735	£7.35
250 - 490	£0.703	£7.03
500 +	£0.444	£4.44

*price indicative

RS Stock No.:: 130-0923
Mfr. Part No.:: IPP055N03LGXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	30 V
	Series	OptiMOS™ 3
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	68 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Length	10.36mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	15 nC @ 4.5 V
	Width	4.57mm
	Height	15.95mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.1V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 30 V
	Series OptiMOS™ 3
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 68 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Length 10.36mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 15 nC @ 4.5 V
	Width 4.57mm
	Height 15.95mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.1V

Infineon OptiMOS™ 3 Series MOSFET, 50A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IPP055N03LGXKSA1

This high-performance MOSFET is designed for various electronic applications, including power management systems. It features a through-hole TO-220 package, measuring 10.36mm x 4.57mm x 15.95mm. Specifically suited for automation and electrical industries, this device ensures optimal performance under rigorous conditions.

Features & Benefits

• Fast switching capability enhances efficiency in power applications
• Low drain-source on-resistance minimises power loss during operation
• Avalanche rated for improved durability under stress
• Logic-level N-channel design enables compatibility with low-voltage drives
• Maximum continuous drain current of 50A supports demanding tasks

Applications

• Used for DC/DC conversion in power supplies
• Ideal for synchronous rectification in high-efficiency converters
• Facilitates motor control in industrial automation systems
• Used in battery management systems for electric vehicles
• Suitable for both consumer electronics and renewable energy

What is the significance of its low RDS(on) in power applications?

A low RDS(on) reduces the on-state voltage drop, which directly lowers heat generation and improves efficiency. This is crucial for maintaining performance in high-current applications, ensuring that less energy is wasted as heat.

How does this MOSFET handle high temperatures during operation?

With a maximum operating temperature of +175 °C, it has robust thermal characteristics, allowing it to function reliably in challenging environments without compromising performance.

What type of applications can benefit from the enhancement mode transistor design?

Enhancement mode transistors are widely used in switching applications as they provide excellent control over the current flow, making them ideal for efficient power management solutions. This includes their use in power supplies and DC motors.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.