Name: Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2
Brand: Infineon
SKU: 165-5607
Price: 0.66 GBP
Availability: Discontinued

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	60 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS™ -T2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	8.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	107 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Length	10mm
	Width	9.25mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	83 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	4.4mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 60 V
	Package Type D2PAK (TO-263)
	Series OptiMOS™ -T2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 8.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 107 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Length 10mm
	Width 9.25mm
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 83 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 4.4mm

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2

Infineon OptiMOS™ T2 Power MOSFETs

Related links

Be the first to know about our latest products and services