Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2

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RS Stock No.:
165-5607
Mfr. Part No.:
IPB80N06S4L05ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

9.25mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

83 nC @ 10 V

Length

10mm

Number of Elements per Chip

1

Height

4.4mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™ T2 Power MOSFETs


Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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