Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
- RS Stock No.:
- 214-9067
- Mfr. Part No.:
- IPI80N06S4L07AKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£30.05
(exc. VAT)
£36.05
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 250 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.601 | £30.05 |
| 100 - 200 | £0.584 | £29.20 |
| 250 - 450 | £0.569 | £28.45 |
| 500 - 950 | £0.554 | £27.70 |
| 1000 + | £0.541 | £27.05 |
*price indicative
- RS Stock No.:
- 214-9067
- Mfr. Part No.:
- IPI80N06S4L07AKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | I2PAK (TO-262) | |
| Series | OptiMOS™ -T2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0067 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type I2PAK (TO-262) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0067 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
It has 175°C operating temperature
100% Avalanche tested
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin I2PAK IPI80N06S407AKSA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin I2PAK IPI45N06S409AKSA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin I2PAK IPI70N04S406AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP80N06S407AKSA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin I2PAK IPI80N06S208AKSA1