MPN

Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1

RS Stock No.:: 273-2627
Mfr. Part No.:: BSC076N04NDATMA1
Brand:: Infineon

Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1

Subtotal (1 reel of 5000 units)*

£2,990.00

(exc. VAT)

£3,590.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 24 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	£0.598	£2,990.00

*price indicative

RS Stock No.:: 273-2627
Mfr. Part No.:: BSC076N04NDATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON-8-4
	Series	OptiMOS-T2
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	65W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON-8-4
	Series OptiMOS-T2
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 65W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56
	Automotive Standard No

Datasheet - BSC076N04NDATMA1

The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.

Halogen free

RoHS compliant

Pb free lead plating

Fast switching MOSFETs

Superior thermal resistance