Infineon HEXFET N-Channel MOSFET, 46 A, 250 V Enhancement TO-220 IRFB4229PBF
- RS Stock No.:
- 257-9347
- Mfr. Part No.:
- IRFB4229PBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
£4.66
(exc. VAT)
£5.60
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 364 unit(s) shipping from 28 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.33 | £4.66 |
| 20 - 48 | £2.095 | £4.19 |
| 50 - 98 | £1.955 | £3.91 |
| 100 - 198 | £1.82 | £3.64 |
| 200 + | £1.68 | £3.36 |
*price indicative
- RS Stock No.:
- 257-9347
- Mfr. Part No.:
- IRFB4229PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 46mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 46mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFB series is the 250V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard through hole power package
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
Related links
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