Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V TO-263
- RS Stock No.:
- 257-9434
- Mfr. Part No.:
- IRFS4620TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 800 units)*
£708.80
(exc. VAT)
£850.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.886 | £708.80 |
| 1600 + | £0.842 | £673.60 |
*price indicative
- RS Stock No.:
- 257-9434
- Mfr. Part No.:
- IRFS4620TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 77.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 77.5mΩ | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel HEXFET Power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability lead free
Related links
- Infineon HEXFET N-Channel MOSFET 200 V D2PAK IRFS4620TRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR4620TRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR4620PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK AUIRFR4620TRL
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC500N20NS3GATMA1
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin SOIC IRF8788TRPBF
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin TO-220 Full-Pak IRFI1310NPBF
- ROHM N-Channel MOSFET 1200 V D2PAK SCT4062KW7HRTL