Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263
- RS Stock No.:
- 258-3991
- Mfr. Part No.:
- IRL530NSTRLPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 800 units)*
£336.00
(exc. VAT)
£400.00
(inc. VAT)
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- Shipping from 14 September 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.42 | £336.00 |
| 1600 - 1600 | £0.399 | £319.20 |
| 2400 + | £0.382 | £305.60 |
*price indicative
- RS Stock No.:
- 258-3991
- Mfr. Part No.:
- IRL530NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-263 IRL530NSTRLPBF
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF530NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
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