MPN

Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263

RS Stock No.:: 258-3991
Mfr. Part No.:: IRL530NSTRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263

Bulk discount available

Subtotal (1 reel of 800 units)*

£388.00

(exc. VAT)

£465.60

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 16 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
800 - 800	£0.485	£388.00
1600 - 1600	£0.461	£368.80
2400 +	£0.441	£352.80

*price indicative

RS Stock No.:: 258-3991
Mfr. Part No.:: IRL530NSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	150mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	22.7nC
	Maximum Power Dissipation Pd	3.8W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 150mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 22.7nC
	Maximum Power Dissipation Pd 3.8W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRL530NSTRLPBF

The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package