Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin D2PAK IRF530NSTRLPBF

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Subtotal (1 pack of 20 units)*

£16.60

(exc. VAT)

£20.00

(inc. VAT)

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  • 80 unit(s) ready to ship
  • Plus 2,620 unit(s) shipping from 08 October 2025
  • Plus 20 unit(s) shipping from 10 November 2025
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Units
Per unit
Per Pack*
20 - 80£0.83£16.60
100 - 180£0.639£12.78
200 - 480£0.597£11.94
500 - 980£0.565£11.30
1000 +£0.515£10.30

*price indicative

Packaging Options:
RS Stock No.:
831-2837
Mfr. Part No.:
IRF530NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

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