Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin D2PAK IRF530NSTRLPBF
- RS Stock No.:
- 831-2837
- Mfr. Part No.:
- IRF530NSTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£16.60
(exc. VAT)
£20.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 80 unit(s) ready to ship
- Plus 2,620 unit(s) shipping from 30 October 2025
- Plus 20 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.83 | £16.60 |
| 100 - 180 | £0.639 | £12.78 |
| 200 - 480 | £0.597 | £11.94 |
| 500 - 980 | £0.565 | £11.30 |
| 1000 + | £0.515 | £10.30 |
*price indicative
- RS Stock No.:
- 831-2837
- Mfr. Part No.:
- IRF530NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Length 10.67mm | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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