Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB IRF530NPBF

Save 38% when you buy 1250 units

Subtotal (1 tube of 50 units)*

£29.20

(exc. VAT)

£35.05

(inc. VAT)

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  • 350 unit(s) ready to ship
  • Plus 50 unit(s) shipping from 08 October 2025
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Units
Per unit
Per Tube*
50 - 50£0.584£29.20
100 - 200£0.45£22.50
250 - 450£0.421£21.05
500 - 1200£0.392£19.60
1250 +£0.362£18.10

*price indicative

RS Stock No.:
919-4842
Mfr. Part No.:
IRF530NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

37 nC @ 10 V

Length

10.54mm

Forward Diode Voltage

1.3V

Height

8.77mm

Minimum Operating Temperature

-55 °C

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