Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4842
Mfr. Part No.:: IRF530NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

£29.20

(exc. VAT)

£35.05

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

200 unit(s) ready to ship
Plus 50 unit(s) shipping from 06 January 2026
Plus 2,000 unit(s) shipping from 17 June 2026

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Units	Per unit	Per Tube*
50 - 50	£0.584	£29.20
100 - 200	£0.45	£22.50
250 - 450	£0.421	£21.05
500 - 1200	£0.392	£19.60
1250 +	£0.362	£18.10

*price indicative

RS Stock No.:: 919-4842
Mfr. Part No.:: IRF530NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	70W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 70W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 70W Maximum Power Dissipation - IRF530NPBF

This high power MOSFET is designed for efficient switching applications, offering robust performance across various environments. Its N-channel enhancement mode configuration makes it suitable for numerous electronic and electrical applications where effective current management is crucial. The key specifications position it as an important component in modern automation and control systems.

Features & Benefits

• Low on-resistance of 90mΩ enhances efficiency

• Maximum drain current handling of 17A

• Operating temperature range from -55°C to +175°C

• Fast switching speed reduces energy losses

• Robust design improves reliability under load

• Versatile TO-220AB package facilitates easy integration

Applications

• Power management in industrial automation

• Integration in motor control circuits

• Utilisation in power supply systems for voltage regulation

• Application in high-efficiency converters and inverters

• Suitable for consumer electronics requiring dynamic load support

Is there a specific gate voltage required for optimal operation?

The device operates effectively with a gate-source voltage range of -20V to +20V, ensuring reliable switching functionality.

What is the maximum pulse drain current capability of this device?

The maximum pulsed drain current is rated at 60A, allowing for transient conditions without compromising device integrity.

How do thermal resistance values affect performance?

With a junction-to-case thermal resistance of 2.15°C/W, effective heat dissipation is vital for maintaining performance during high load operation.

What considerations should I have for soldering this component?

The recommended soldering temperature is 300°C for a duration of 10 seconds. It is important to adhere to this guideline to prevent damage.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.