Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB IRF530NPBF
- RS Stock No.:
- 919-4842
- Mfr. Part No.:
- IRF530NPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£29.20
(exc. VAT)
£35.05
(inc. VAT)
FREE delivery for orders over £50.00
- 200 unit(s) ready to ship
- Plus 50 unit(s) shipping from 31 October 2025
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.584 | £29.20 |
| 100 - 200 | £0.45 | £22.50 |
| 250 - 450 | £0.421 | £21.05 |
| 500 - 1200 | £0.392 | £19.60 |
| 1250 + | £0.362 | £18.10 |
*price indicative
- RS Stock No.:
- 919-4842
- Mfr. Part No.:
- IRF530NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.69mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 8.77mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.69mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 8.77mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 70W Maximum Power Dissipation - IRF530NPBF
Features & Benefits
• Maximum drain current handling of 17A
• Operating temperature range from -55°C to +175°C
• Fast switching speed reduces energy losses
• Robust design improves reliability under load
• Versatile TO-220AB package facilitates easy integration
Applications
• Integration in motor control circuits
• Utilisation in power supply systems for voltage regulation
• Application in high-efficiency converters and inverters
• Suitable for consumer electronics requiring dynamic load support
Is there a specific gate voltage required for optimal operation?
What is the maximum pulse drain current capability of this device?
How do thermal resistance values affect performance?
What considerations should I have for soldering this component?
Can I use it in applications with a fluctuating power supply?
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