Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB IRF530NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£29.20

(exc. VAT)

£35.05

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 200 unit(s) ready to ship
  • Plus 50 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£0.584£29.20
100 - 200£0.45£22.50
250 - 450£0.421£21.05
500 - 1200£0.392£19.60
1250 +£0.362£18.10

*price indicative

RS Stock No.:
919-4842
Mfr. Part No.:
IRF530NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.54mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

8.77mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 70W Maximum Power Dissipation - IRF530NPBF


This high power MOSFET is designed for efficient switching applications, offering robust performance across various environments. Its N-channel enhancement mode configuration makes it suitable for numerous electronic and electrical applications where effective current management is crucial. The key specifications position it as an important component in modern automation and control systems.

Features & Benefits


• Low on-resistance of 90mΩ enhances efficiency
• Maximum drain current handling of 17A
• Operating temperature range from -55°C to +175°C
• Fast switching speed reduces energy losses
• Robust design improves reliability under load
• Versatile TO-220AB package facilitates easy integration

Applications


• Power management in industrial automation
• Integration in motor control circuits
• Utilisation in power supply systems for voltage regulation
• Application in high-efficiency converters and inverters
• Suitable for consumer electronics requiring dynamic load support

Is there a specific gate voltage required for optimal operation?


The device operates effectively with a gate-source voltage range of -20V to +20V, ensuring reliable switching functionality.

What is the maximum pulse drain current capability of this device?


The maximum pulsed drain current is rated at 60A, allowing for transient conditions without compromising device integrity.

How do thermal resistance values affect performance?


With a junction-to-case thermal resistance of 2.15°C/W, effective heat dissipation is vital for maintaining performance during high load operation.

What considerations should I have for soldering this component?


The recommended soldering temperature is 300°C for a duration of 10 seconds. It is important to adhere to this guideline to prevent damage.

Can I use it in applications with a fluctuating power supply?


Yes, the device is designed to handle dynamic conditions, making it appropriate for various applications with variable loads and power sources.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links