Infineon HEXFET N-Channel MOSFET, 17 A, 150 V, 3-Pin TO-220AB IRFB4019PBF

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Subtotal (1 tube of 50 units)*

£61.80

(exc. VAT)

£74.15

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£1.236£61.80
100 - 200£1.174£58.70
250 - 450£1.125£56.25
500 - 950£1.051£52.55
1000 +£0.989£49.45

*price indicative

RS Stock No.:
145-8607
Mfr. Part No.:
IRFB4019PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.82mm

Transistor Material

Si

Length

10.66mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

Digital Audio MOSFET, Infineon


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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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