Infineon HEXFET N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB IRFB4228PBF
- RS Stock No.:
- 688-6948
- Distrelec Article No.:
- 302-84-037
- Mfr. Part No.:
- IRFB4228PBF
- Brand:
- Infineon
Subtotal (1 unit)*
£3.30
(exc. VAT)
£3.96
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6 unit(s) ready to ship
- Plus 847 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £3.30 |
*price indicative
- RS Stock No.:
- 688-6948
- Distrelec Article No.:
- 302-84-037
- Mfr. Part No.:
- IRFB4228PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 83 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 8.77mm | ||
Minimum Operating Temperature -40 °C | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4228PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRF3415PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4115PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4115GPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB23N15DPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4615PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4019PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4321PBF