Infineon HEXFET N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB IRFB4228PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

83 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-40 °C

Height

8.77mm