Infineon OptiMOS™ 3 N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1
- RS Stock No.:
- 897-7412
- Mfr. Part No.:
- IPP111N15N3GXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
£9.66
(exc. VAT)
£11.592
(inc. VAT)
FREE delivery for orders over £50.00
- 436 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
4 - 16 | £2.415 | £9.66 |
20 - 36 | £2.295 | £9.18 |
40 - 96 | £2.198 | £8.79 |
100 - 196 | £2.10 | £8.40 |
200 + | £1.955 | £7.82 |
*price indicative
- RS Stock No.:
- 897-7412
- Mfr. Part No.:
- IPP111N15N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 83 A | |
Maximum Drain Source Voltage | 150 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 11.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 214 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
Width | 4.57mm | |
Length | 10.36mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 15.95mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 150 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Width 4.57mm | ||
Length 10.36mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 83A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IPP111N15N3GXKSA1
Features & Benefits
• Low on-resistance which reduces power loss
• High power dissipation capacity for consistent operation
• Effectively handles both pulsed and continuous currents
• Through-hole mounting design for easy installation
Applications
• Applicable in high-frequency switching for enhanced efficiency
• Suitable for automotive and industrial automation systems
• Utilised in energy conversion systems like converters and inverters
• Employed in power management for renewable energy technologies
Can this be used in industrial automation systems?
What are the benefits of using this component in power supplies?
How does this perform under extreme temperatures?
Is it compatible with existing designs in my application?
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4228PBF
- Infineon IPA N-Channel MOSFET 100 V, 3-Pin TO-220 FP IPA030N10NF2SXKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R037C6FKSA1
- onsemi N-Channel MOSFET 40 V, 3-Pin DPAK NVD5C454NT4G
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R020M2HXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP200N15N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1