Infineon CoolMOS™ C6 N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1
- RS Stock No.:
- 110-7474
- Mfr. Part No.:
- IPW65R037C6FKSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£13.36
(exc. VAT)
£16.03
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £13.36 |
*price indicative
- RS Stock No.:
- 110-7474
- Mfr. Part No.:
- IPW65R037C6FKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 83 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS™ C6 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 37 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 500 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 16.13mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 330 nC @ 10 V | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.85V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ C6 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 37 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 500 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 16.13mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 330 nC @ 10 V | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.85V | ||
Related links
- Infineon CoolMOS™ C6 N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R037C6FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 700 V, 3-Pin I2PAK IPI65R380C6XKSA1
- onsemi N-Channel MOSFET 40 V, 3-Pin DPAK NVD5C454NT4G
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4228PBF
- Infineon IPA N-Channel MOSFET 100 V, 3-Pin TO-220 FP IPA030N10NF2SXKSA1
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86322
- onsemi NTMFS3 N-Channel MOSFET 40 V, 5-Pin DFN5 NTMFS3D1N04XMT1G