Infineon CoolMOS™ C6 N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1

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RS Stock No.:
911-5029
Mfr. Part No.:
IPW60R190C6FKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

21.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
DE

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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