Infineon CoolMOS™ C6 N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1
- RS Stock No.:
- 911-5029
- Mfr. Part No.:
- IPW60R190C6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£77.91
(exc. VAT)
£93.48
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 240 unit(s) shipping from 14 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £2.597 | £77.91 |
| 60 - 120 | £2.467 | £74.01 |
| 150 - 270 | £2.364 | £70.92 |
| 300 - 570 | £2.26 | £67.80 |
| 600 + | £2.104 | £63.12 |
*price indicative
- RS Stock No.:
- 911-5029
- Mfr. Part No.:
- IPW60R190C6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20.2 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ C6 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 151 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.21mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Length | 16.13mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ C6 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 151 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 5.21mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Length 16.13mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- DE
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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