Infineon CoolMOS™ C6 N-Channel MOSFET, 77 A, 650 V, 3-Pin TO-247 IPW60R041C6FKSA1
- RS Stock No.:
- 753-3059
- Mfr. Part No.:
- IPW60R041C6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£10.04
(exc. VAT)
£12.05
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 240 unit(s) shipping from 24 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £10.04 |
| 5 - 9 | £9.54 |
| 10 - 24 | £9.34 |
| 25 - 49 | £8.73 |
| 50 + | £8.13 |
*price indicative
- RS Stock No.:
- 753-3059
- Mfr. Part No.:
- IPW60R041C6FKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 77 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ C6 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 481 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 16.13mm | |
| Typical Gate Charge @ Vgs | 290 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 77 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ C6 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 481 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 290 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
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