Infineon CoolMOS C6 Type N-Channel MOSFET, 77 A, 650 V Enhancement, 3-Pin TO-247 IPW60R041C6FKSA1
- RS Stock No.:
- 753-3059
- Mfr. Part No.:
- IPW60R041C6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£10.04
(exc. VAT)
£12.05
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 240 unit(s) shipping from 24 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £10.04 |
| 5 - 9 | £9.54 |
| 10 - 24 | £9.34 |
| 25 - 49 | £8.73 |
| 50 + | £8.13 |
*price indicative
- RS Stock No.:
- 753-3059
- Mfr. Part No.:
- IPW60R041C6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS C6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 290nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 481W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS C6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 290nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 481W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R041C6FKSA1
- onsemi NTBL02 SiC N-Channel MOSFET 650 V, 8-Pin H-PSOF8L NTBL023N065M3S
- Infineon IMT SiC N-Channel MOSFET 650 V, 4-Pin PG-LHSOF-4 IMTA65R020M2HXTMA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R160C6FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R190C6FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R099C6FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R190C6FKSA1
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-247 FCH041N60E