Infineon OptiMOS™ 3 N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1

RS Stock No.:: 165-8120
Mfr. Part No.:: IPP111N15N3GXKSA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1

Subtotal (1 tube of 50 units)*

£106.00

(exc. VAT)

£127.00

(inc. VAT)

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Plus 400 unit(s) shipping from 27 October 2025

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Units	Per unit	Per Tube*
50 +	£2.12	£106.00

*price indicative

RS Stock No.:: 165-8120
Mfr. Part No.:: IPP111N15N3GXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	83 A
	Maximum Drain Source Voltage	150 V
	Series	OptiMOS™ 3
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	11.3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	214 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.57mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	41 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Length	10.36mm
	Forward Diode Voltage	1.2V
	Height	15.95mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 83 A
	Maximum Drain Source Voltage 150 V
	Series OptiMOS™ 3
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 11.3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 214 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.57mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 41 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Length 10.36mm
	Forward Diode Voltage 1.2V
	Height 15.95mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon OptiMOS™ 3 Series MOSFET, 83A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IPP111N15N3GXKSA1

This MOSFET is suitable for high-efficiency switching applications, significantly enhancing system efficiency and performance across various industries including automation and electronics. Its features, including a high continuous drain current and broad operating temperature range, make it adaptable for various environments.

Features & Benefits

• N-channel design for effective switching capabilities
• Low on-resistance which reduces power loss
• High power dissipation capacity for consistent operation
• Effectively handles both pulsed and continuous currents
• Through-hole mounting design for easy installation

Applications

• Ideal for synchronous rectification in power supplies
• Applicable in high-frequency switching for enhanced efficiency
• Suitable for automotive and industrial automation systems
• Utilised in energy conversion systems like converters and inverters
• Employed in power management for renewable energy technologies

Can this be used in industrial automation systems?

Yes, it is suitable for automated systems due to its efficiency and dependable performance.

What are the benefits of using this component in power supplies?

It features low on-resistance and high drain current, minimising power losses and improving thermal management in power supply designs.

How does this perform under extreme temperatures?

This component operates reliably within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

Is it compatible with existing designs in my application?

Yes, its TO-220 package type and through-hole mounting style are compatible with many established circuit designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.