Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
- RS Stock No.:
- 906-2956
- Mfr. Part No.:
- IPA105N15N3GXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
£16.04
(exc. VAT)
£19.24
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | £4.01 | £16.04 |
| 20 - 36 | £3.81 | £15.24 |
| 40 - 96 | £3.65 | £14.60 |
| 100 - 196 | £3.488 | £13.952 |
| 200 + | £3.248 | £12.992 |
*price indicative
- RS Stock No.:
- 906-2956
- Mfr. Part No.:
- IPA105N15N3GXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 37 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 40.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.85mm | |
| Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
| Length | 10.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 16.15mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 37 A | ||
Maximum Drain Source Voltage 150 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 40.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.85mm | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Length 10.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 16.15mm | ||
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