Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1
- RS Stock No.:
- 754-5443
- Mfr. Part No.:
- IPB200N15N3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£1.64
(exc. VAT)
£1.96
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5,904 unit(s) shipping from 08 October 2025
- Plus 130 unit(s) shipping from 08 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £0.82 | £1.64 |
*price indicative
- RS Stock No.:
- 754-5443
- Mfr. Part No.:
- IPB200N15N3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 9.45mm | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 10.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 9.45mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin D2PAK IPB200N15N3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin DPAK IPD200N15N3GATMA1
- onsemi N-Channel MOSFET 150 V, 3-Pin DPAK FDD86250-F085
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP200N15N3GXKSA1
- ROHM N-Channel MOSFET 150 V, 3-Pin TO-220AB RX3R05BBHC16
- ROHM RJ1 N-Channel MOSFET 150 V, 3-Pin D2PAK RJ1R04BBHTL1
- onsemi NTB7D N-Channel MOSFET 150 V, 3-Pin D2PAK NTB7D3N15MC
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB075N15A