Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK IRLR3410TRLPBF
- RS Stock No.:
- 130-1021
- Mfr. Part No.:
- IRLR3410TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 25 units)*
£17.60
(exc. VAT)
£21.125
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 18 December 2025
Units | Per unit | Per Pack* |
---|---|---|
25 - 100 | £0.704 | £17.60 |
125 - 225 | £0.669 | £16.73 |
250 - 600 | £0.64 | £16.00 |
625 - 1225 | £0.599 | £14.98 |
1250 + | £0.564 | £14.10 |
*price indicative
- RS Stock No.:
- 130-1021
- Mfr. Part No.:
- IRLR3410TRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 79 W | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Width | 6.22mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 34 nC @ 5 V | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 79 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 34 nC @ 5 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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