Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK IRLR3410TRLPBF
- RS Stock No.:
- 130-1021
- Mfr. Part No.:
- IRLR3410TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£12.20
(exc. VAT)
£14.65
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,975 unit(s) shipping from 21 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.488 | £12.20 |
| 125 - 225 | £0.464 | £11.60 |
| 250 - 600 | £0.444 | £11.10 |
| 625 - 1225 | £0.415 | £10.375 |
| 1250 + | £0.39 | £9.75 |
*price indicative
- RS Stock No.:
- 130-1021
- Mfr. Part No.:
- IRLR3410TRLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 79 W | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 34 nC @ 5 V | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 79 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 34 nC @ 5 V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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